University of Utah engineers have discovered a groundbreaking semiconducting material that could lead to faster computers and smartphones, all while consuming a lot less power. Once again, behold the power of the battery – and how desperately we cling to our devices.
The semiconductor is made of tin and oxygen, or tin monoxide. It's a 2D material that is only an atom thick, so electrical charges move through it much faster than conventional 3D materials like silicon.
You may have heard of some similar disruptive technologies, such as graphene, but they only move negative electrons. In order to create an electronic device, you need semiconductor material that allows both negative electrons and positive charges. This new design is the first stable 2D semiconductor material in existence. And it’s looking quite promising for transistors, the lifeblood of all things electronic.
We could soon see transistors that could make smartphones more than 100 times faster than regular devices. And because the electrons move through one layer instead of bouncing around in a 3D material, there will be less friction, which means cooler processors, and pockets.
